Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5468262 | Vacuum | 2017 | 10 Pages |
Abstract
Two kinds of Cu(InGa)Se2(CIGS) absorbers and the corresponding solar cells have been fabricated by sputtering from Se-poor and Se-rich quaternary CIGS targets, respectively. The CIGS thin films fabricated by Se-poor target are mainly composed of chalcopyrite CIGS phase together with small amount of Cu2-xSe compound, while the CIGS thin films fabricated by Se-rich target show single chalcopyrite CIGS phase. The electrical properties of Se-poor films are deteriorated severely due to the formation of Cu2-xSe compared with that of Se-rich film. The highest device efficiency of 12.5% has been achieved in the work with absorber sputtering from Se-rich target with Se-free post annealing. It was found that the key limiting factor to success by this method is sufficient selenium in CIGS absorbers.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Leng Zhang, Daming Zhuang, Ming Zhao, Qianming Gong, Li Guo, Liangqi Ouyang, Rujun Sun, Yaowei Wei, Shilu Zhan,