BaxSr1−xTiO3 sensing membrane in electrolyte-insulator-semiconductor structure with rapid thermal annealing in N2 ambient

Ion-sensitive field - effect transistor (ISFET) biosensors were fabricated with a pH-sensitive BaxSr1−xTiO3 membrane on silicon substrates in an Electrolyte-Insulator-Semiconductor (EIS) structure. To investigate the effects of annealing in N2 ambient, multiple material analyses including XRD and AFM were performed. Results indicate that the annealing treatment might deteriorate the crystallization. Therefore, the sensing behaviours in terms of sensitivity, linearity, hysteresis effects, and drift rates might be worsened. In this research, BaxSr1−xTiO3 membranes in an EIS structure with a high sensitivity and linearity were made. However, owing to its special and complicated structures, high-temperature thermal annealing was not suitable for the BaxSr1−xTiO3 membrane to further boost its sensing capability.