Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5468319 | Vacuum | 2017 | 4 Pages |
Abstract
Thermal annealing of graphene was studied to improve the thermal stability. During the annealing under an Ar atmosphere with temperature from 100 °C to 600 °C, graphene exhibits partial removal of PMMA residues, low density of defect cracks in SEM images and relatively low ID/IG ratios in Raman spectrum probing. For a top-gated graphene transistor with thermal annealing, it performs high carrier mobility up to 3500 cm2 Vâ1 sâ1 and slightly asymmetric bipolar behaviours as well as slight Dirac point variation within ±0.2 V.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Bo Liu, In-Shiang Chiu, Chao-Sung Lai,