Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5468351 | Vacuum | 2017 | 7 Pages |
Abstract
The inclusion of cubic phase in MOVPE-grown hexagonal GaN on GaAs substrate and its dependence with the growth temperature are investigated by high-resolution X-ray diffraction (HR-XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and cathodoluminescence (CL). It is observed that the GaN layers surface exhibits 3D-grains structure. The density and shape of these grains are largely dependent on the growth temperature. HR-XRD study reveals the presence of cubic GaN clusters in the hexagonal GaN layer. Using CL we show that the cubic inclusions are not localized at the substrate/epilayer interface but propagate throughout the film.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
J. Laifi, N. Chaaben, Y. El Gmili, J.P. Salvestrini, A. Bchetnia, B. El Jani,