Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5468464 | Vacuum | 2016 | 4 Pages |
Abstract
Three components of lead hafnate titanate (PbHfxTi1-xO3, PHT) thin films have been fabricated by pulsed laser deposition (PLD) on the Pt (111)/Ti/SiO2/Si (100) substrates. In order to reduce the mismatch between the thin films and substrates, low temperature self-buffered layer is adopted. The effects of Hf content on structure and electric properties of PHT thin films have been investigated. The PHT near the MPB (x = 0.48) shows the highest remnant polarization (2Pr = 93.23 μC/cm2) and capacitance, even if its leakage current is a little worse than others. It should be noticed that the PHT ferroelectric films have a good performance after 2.15 Ã 1010 fatigue reversals, which indicates that PHT films as a promising material can be applied in ferromagnetic random access memory (FRAM).
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Junfeng Li, Jun Zhu, Zhipeng Wu, Wenbo Luo,