Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5468473 | Vacuum | 2016 | 5 Pages |
Abstract
X-ray photoelectron spectroscopy was used to measure the valence-band offset (ÎEV) of MgO/InP heterostructure. Two sets of core level pairs in the MgO/InP system were used to demonstrate the accuracy of the calculation, the ÎEV value was the same (5.33 ± 0.15 eV) when using the In 3d3/2, Mg 2p pair and In 3d5/2, Mg 2p pair, indicating our calculations are accuracy and reasonable. Taking the band gaps of 7.83 eV for MgO and 1.34 eV for InP into consideration, a type-I band alignment of MgO/InP heterostructure was obtained with conduction band offset (CBO) of 1.16 ± 0.15 eV for two sets of core level pairs, indicating a nested interface band alignment heterostructure was prepared. The accurate determination of the band alignment of MgO/InP has a significant impact on the performance of InP-based devices.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Xue Liu, Xiaohua Wang, Dengkui Wang, Jilong Tang, Xuan Fang, Dan Fang, Yongfeng Li, Bin Yao, Xiaohui Ma, Haizhu Wang, Zhipeng Wei,