| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5488273 | Chinese Journal of Physics | 2017 | 17 Pages |
Abstract
The conduction model has been proposed for the metal-TiO2-Si (MIS) structures. Rutile films have been prepared on Si substrates by magnetron sputtering of TiO2 target and annealing in the air at temperatures Tâ=â800 and 1050Â K. The current-voltage (CVC) and capacitance-voltage characteristics of the structures have been measured over the range of Tâ=â283-363Â K. At positive potentials on the gate, the conductivity of the MIS structures is determined by the space charge-limited current in the dielectric layer.
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Authors
V.M. Kalygina, I.S. Egorova, I.A. Prudaev, O.P. Tolbanov, V.V. Atuchin,