| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5488330 | Chinese Journal of Physics | 2017 | 7 Pages |
Abstract
We report variable range hopping (VRH) transport in monolayer epitaxial graphene grown on SiC. A crossover from Efros-Shklovskii (E-S) VRH to Mott VRH can be observed by increasing the magnetic field applied perpendicular to the plane of graphene or by a low-temperature vacuum annealing process. Our new experimental results suggest that monolayer graphene on SiC is an interesting platform for probing VRH and crossover between different VRH regimes in a strongly disordered system.
Related Topics
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Authors
Ya-Chi Lee, Chieh-I Liu, Yanfei Yang, Randolph E Elmquist, Chi-Te Liang,