Article ID Journal Published Year Pages File Type
5488414 Chinese Journal of Physics 2016 14 Pages PDF
Abstract
Using the formalism of the full potential linearized augmented plane wave (FP-LAPW) method with the Tran and Blaha modified Becke-Johnson potential (TB-mBJ), we investigated the electronic structure and optical properties of titanium and iron doped silicon carbide (3C-Si1-xTixC and 3C-Si1-xFexC, x = 0.0625 and 0.125). We found that the direct band gap of 3C-Si1-xTix C and 3C-Si1-xFex C increased with Ti and decreased with Fe. For the second study, we compared the optical properties for Ti doped 3C-SiC and Fe doped 3C-SiC. The optical conductivity of iron doped 3C-SiC is higher than Ti doped 3C-SiC. According to these results, the compound 3C-Si1-xFexC could be used to solar cell application. We suggest that Fe doped 3C-SiC could be used for solar cell application.
Related Topics
Physical Sciences and Engineering Physics and Astronomy Atomic and Molecular Physics, and Optics
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