Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5488414 | Chinese Journal of Physics | 2016 | 14 Pages |
Abstract
Using the formalism of the full potential linearized augmented plane wave (FP-LAPW) method with the Tran and Blaha modified Becke-Johnson potential (TB-mBJ), we investigated the electronic structure and optical properties of titanium and iron doped silicon carbide (3C-Si1-xTixC and 3C-Si1-xFexC, x =â0.0625 and 0.125). We found that the direct band gap of 3C-Si1-xTix C and 3C-Si1-xFex C increased with Ti and decreased with Fe. For the second study, we compared the optical properties for Ti doped 3C-SiC and Fe doped 3C-SiC. The optical conductivity of iron doped 3C-SiC is higher than Ti doped 3C-SiC. According to these results, the compound 3C-Si1-xFexC could be used to solar cell application. We suggest that Fe doped 3C-SiC could be used for solar cell application.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Atomic and Molecular Physics, and Optics
Authors
Mohamed Houmad, Halima Zaari, Abdelilah Benyoussef, Abdelah El Kenz,