High and abrupt breakdown voltage In0.15Ga0.85As0.14Sb0.86/GaSb junctions grown by LPE

p-GaInAsSb/n-GaSb junction with breakdown voltages as high as 38 V and abrupt breakdown characteristic have been fabricated by Liquid Phase Epitaxy. To obtain these characteristics the structures have been submitted to annealing processes just after epitaxial growth. The diffusion of dopant from the n-GaSb substrate towards the epitaxial layer separates the electrical junction from the epitaxial interface and produces junctions with better inverse polarization behavior.