Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5488526 | Infrared Physics & Technology | 2017 | 16 Pages |
Abstract
Capacitance-voltage (CV) analysis was performed on homojunction InAs/GaSb superlattice photodiodes for the mid-infrared spectral range around 5μm. The CV investigation was carried out over a wide temperature range from 80 K up to 200 K, for two nominally identical samples from two different epitaxy systems. The characterizations were carried out with a refined measurement setup, considering the impedance range, the measured frequency range and the accessible temperature range. For the calculated residual carrier density in the nid-region of the diodes values in the low 1014 cmâ3 and 1015 cmâ3 ranges were found, respectively.
Keywords
Related Topics
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Authors
Johannes Schmidt, Frank Rutz, Volker Daumer, Robert Rehm,