Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5488536 | Infrared Physics & Technology | 2017 | 20 Pages |
Abstract
Short Wave Infra-Red (SWIR) photodetectors operating above the response cutoff of InGaAs- based detectors (1.7-2.5 μm) are required for both defense and civil applications. Type II Super-Lattices (T2SL) were recently proposed For near- room temperature SWIR detection as a possible system enabling bandgap adjustment in the required range. The work presented here focuses on a T2SL with alternating nano-layers of InGaAs and GaAsSb lattice-matched to an InP substrate. A near room temperature SWIR cutoff of 2.4 µm was measured. Electrical junctions were realized using Zn diffusion p-doping process. We realized and studied both mesa- and selective diffusion- based p-i-n photodiodes. Dark currents of mesa-based devices were 1.5 mA/cm2 and 32 μA/cm2 at 300 and 230 K respectively. Dark currents were reduced to 1.2 mA/cm2 and 12 μA/cm2 respectively by utilizing the selective diffusion process. The effect of operating voltage is discussed. At 300 K the quantum efficiency was up to 40% at 2.18 µm in mesa devices. Dâ was 1.7Ã1010cm·Hz/W at 2 μm.
Related Topics
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Authors
Y. Uliel, D. Cohen-Elias, N. Sicron, I. Grimberg, N. Snapi, Y. Paltiel, M. Katz,