Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5488607 | Infrared Physics & Technology | 2017 | 10 Pages |
Abstract
Electroluminescence of LED heterostructures with active layer made of InAsSb films grown on InAs substrates was studied in the temperature range TÂ =Â 4.2-300Â K. At low temperatures (TÂ =Â 4.2-100Â K), stimulated emission was observed with an optical cavity formed normal to the growth plane. The emission became spontaneous at higher temperatures due to the resonant “switch-on” of the CHHS Auger recombination process in which the energy of a recombining electron-hole pair is transferred to a hole transitioning to the spin-orbit-splitted band. The spontaneous character of emission continued up to room temperature because of the influence of other Auger processes. The results obtained suggest that InAsSb-based LED heterostructures are promising for the fabrication of vertically-emitting mid-infrared lasers.
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Authors
K.D. Mynbaev, N.L. Bazhenov, A.A. Semakova, A.V. Chernyaev, S.S. Kizhaev, N.D. Stoyanov, V.E. Bougrov, H. Lipsanen, Kh.M. Salikhov,