Effect of annealing on structural, electrical and optical properties of p-quaterphenyl thin films

Thin films of p-quaterphenyl are deposited by an evaporation technique. IR spectra confirm that the thermal evaporation method is a decent one to acquire p-quaterphenyl films without dissociation. The X-ray diffraction studies demonstrate that the as-deposited and annealed films are polycrystalline with monoclinic structure. The electrical conductivity shows an activated behavior and indicating that p-quaterphenyl behaves as an organic semiconductor. The value of activation energy decreases by annealing, which explains due to the adjustment in the crystallite size. Optical properties of p-quaterphenyl films were performed to determine some optical constants. Dispersion of the refractive index is described utilizing the Wemple-DiDomenico model. In addition, the third order nonlinear susceptibility and the nonlinear refractive index are calculated. The analysis of the absorption coefficient for the as-deposited film showed an allowed direct optical band gap with a value of 2.35 eV, which decreased by annealing to 2.05 eV.