Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5488695 | Infrared Physics & Technology | 2017 | 5 Pages |
Abstract
Impact of high-conductivity n-type anti-debiasing layer (ADL) on the photoresponse of focal plane array (FPA) elements in mercury-cadmium-tellurium based photovoltaic n-on-p infrared FPA detectors is analyzed via consideration of, first, measured current-voltage characteristics of FPA elements with “leaking” and “non-leaking” array photodiodes and, second, spatial photoresponse profiles measured using FPA elements of both types. A most pronounced manifestation of the parasitic diode with the p-n junction at the absorber layer/ADL interface consists in the emergence of negative photoresponses produced by the “leaking” FPA elements.
Related Topics
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Authors
V.V. Vasiliev, A.V. Vishnyakov, S.A. Dvoretsky, A.V. Predein, I.V. Sabinina, Yu.G. Sidorov, V.A. Stuchinsky,