Article ID Journal Published Year Pages File Type
5488695 Infrared Physics & Technology 2017 5 Pages PDF
Abstract

Impact of high-conductivity n-type anti-debiasing layer (ADL) on the photoresponse of focal plane array (FPA) elements in mercury-cadmium-tellurium based photovoltaic n-on-p infrared FPA detectors is analyzed via consideration of, first, measured current-voltage characteristics of FPA elements with “leaking” and “non-leaking” array photodiodes and, second, spatial photoresponse profiles measured using FPA elements of both types. A most pronounced manifestation of the parasitic diode with the p-n junction at the absorber layer/ADL interface consists in the emergence of negative photoresponses produced by the “leaking” FPA elements.

Related Topics
Physical Sciences and Engineering Physics and Astronomy Atomic and Molecular Physics, and Optics
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