Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5488700 | Infrared Physics & Technology | 2017 | 4 Pages |
Abstract
An empirical expression for the energy bandgap as a function of alloy composition x and temperature for In1âxAlxSb was reported. The In1âxAlxSb epitaxial layers were grown by molecular beam epitaxy (MBE) on InSb(1Â 0Â 0) substrate, utilizing a p+-p+-n-n+ structure. High resolution X-ray diffraction was used to characterize the epitaxial layers. The Al composition of 2.8% was obtained by assuming the Bragg's formula and Vegard's law. Spectral response measurement of the diodes has been employed to investigate the temperature dependence of the band gap of In1âxAlxSb alloys in the range between 77Â K and 260Â K. The calculated results for energy gap of InAlSb were in good agreement with the available data and our experimental observation.
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Atomic and Molecular Physics, and Optics
Authors
Gang Chen, Weiguo Sun, Yanqiu Lv,