Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5488708 | Infrared Physics & Technology | 2017 | 11 Pages |
Abstract
In0.85Ga0.15As photodetectors grown on GaAs substrates using an interfacial misfit array-based simple buffer are studied. The material quality is assessed with a range of characterization tools showing low surface roughness and low density of threading dislocations. These results indicate a significant improvement on crystal quality compared to structures grown on InP substrates by using metamorphic buffers. Quantum efficiency and responsivity measurements show good performance of the fabricated devices between 1.5 and 2.5 µm, making them highly suitable for short-wavelength infrared applications.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Atomic and Molecular Physics, and Optics
Authors
Pamela Jurczak, Kimberly A. Sablon, Marina Gutiérrez, Huiyun Liu, Jiang Wu,