Preparation of poly-Si films by inverted AIC process on graphite substrate

Graphite/a-Si/Al laminated structures were deposited on graphite substrate using magnetron sputtering technology. The substrate temperature of amorphous silicon (a-Si) deposition and the Al/Si thickness ratio have strong influences on a-Si crystallization, various conditions were used to investigate the polycrystalline silicon (poly-Si) thin films grown by inverted aluminum-induced crystallization (AIC) for process optimization. In this paper, we established the AIC model to explain the effects of the two factors in the inverted AIC process. The poly-Si thin films were characterized By means of Scanning electron microscope (SEM), X-ray diffraction (XRD) and Raman spectroscopy (Raman), which showed that the samples with strong preferred (1 1 1) orientation and high crystallization quality that were favorable for epitaxially growing poly-Si thick film cells.