Growth of homogeneous Nd:LGGG single crystal plates by edge-defined film-fed growth method

Device-size Nd3+:(LuxGd1−x)3Ga5O12 (Nd:LGGG) single crystal plates have been grown by edge-defined film-fed growth (EFG) method for the first time. The problems encountered during the crystal growth have been discussed and solved, resulting in a single crystal plate with a length of 180 mm. In particular, the evaporation loss of Ga2O3 composition during the crystal growing has been depressed efficiently by using an Ir lid. The crystal perfection was confirmed by X-ray rocking curve with a FWHM of the 32 arcsec, meaning a high crystalline quality. It was very interesting to find that the distribution of Nd3+ in the crystal grown by EFG method was more homogeneous than that in Cz method, benefitting from the larger segregation coefficient of Nd3+ in EFG method. The thermal conductivity was measured to be 8.1 W m−1 K−1 at room temperature. All the properties showed that the Nd:LGGG crystal plates grown by EFG method were promising for high power laser application.