Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5489093 | Journal of Crystal Growth | 2017 | 30 Pages |
Abstract
The growth of heavily B-doped low-resistivity diamond films will facilitate the development of novel semiconductor applications. To discuss the key factors that increase B solubility into single-crystal {1 0 0} diamond, the misorientation-angle (θmis) dependences of B incorporation were compared between hot filament (HF) and microwave plasma (MW)-enhanced chemical vapor deposition. Based on the model that considers the step-flow motion, the lifetime of B-related admolecules (Ï) on terrace surface was evaluated. We found that Ï can be extended more than â¼13 times by utilizing HF growth. As a result, the longer migration length of B-related admolecules (ÏB) was evidenced. Conversely, shorter Ï and ÏB were revealed for MW growth which limit the B incorporation (probably due to etching). This study will provide an important insight to increase the B solubility.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Shinya Ohmagari, Masahiko Ogura, Hitoshi Umezawa, Yoshiaki Mokuno,