Lifetime and migration length of B-related admolecules on diamond {1Â 0Â 0}-surface: Comparative study of hot-filament and microwave plasma-enhanced chemical vapor deposition

The growth of heavily B-doped low-resistivity diamond films will facilitate the development of novel semiconductor applications. To discuss the key factors that increase B solubility into single-crystal {1 0 0} diamond, the misorientation-angle (θmis) dependences of B incorporation were compared between hot filament (HF) and microwave plasma (MW)-enhanced chemical vapor deposition. Based on the model that considers the step-flow motion, the lifetime of B-related admolecules (τ) on terrace surface was evaluated. We found that τ can be extended more than ∼13 times by utilizing HF growth. As a result, the longer migration length of B-related admolecules (χB) was evidenced. Conversely, shorter τ and χB were revealed for MW growth which limit the B incorporation (probably due to etching). This study will provide an important insight to increase the B solubility.