Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5489166 | Journal of Crystal Growth | 2017 | 5 Pages |
Abstract
This work provides a comprehensive study of the incorporation behavior of B in growing GaAs under molecular beam epitaxy conditions. Structural characterization of superlattices revealed a strong dependence of the BAs growth rate on the GaAs growth rate used. In general, higher GaAs growth rates lead to a higher apparent BAs growth rate, although lower B cell temperatures showed saturation behavior. Each B cell temperature requires a minimum GaAs growth rate for producing smooth films. The B incorporation into single thick layers was found to be reduced to 75-80% compared to superlattice structures. The p-type carrier densities in 1000Â nm thick layers were found to be indirectly proportional to the B content. Furthermore, 500Â nm thick BxGa1âxAs layers showed significantly lower carrier concentrations, indicating B segregation on the surface during growth of thicker layers.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
H. Detz, D. MacFarland, T. Zederbauer, S. Lancaster, A.M. Andrews, W. Schrenk, G. Strasser,