Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5489179 | Journal of Crystal Growth | 2017 | 4 Pages |
Abstract
In this work, the In1âyGayAs1âxBix epilayers were optimized and grown successfully by V90 gas source molecular beam epitaxy (GSMBE). The effect of using an In0.53Ga0.47As buffer layer on the crystalline quality of In1âyGayAs1âxBix epilayers were investigated. With the buffer layer preparation, the surface RMS roughness value of 0.251Â nm, a maximum electron mobility of 5700Â cm2/Vs and a bulk carrier density of 2.9Â ÃÂ 1016Â cm3 are achieved for the In1âyGayAs1âxBix epilayer with the Bi content up to 3.1%.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Likun Ai, Shuxing Zhou, Ming Qi, Anhuai Xu, Shumin Wang,