Effective surface passivation of In0.53Ga0.47As(0Â 0Â 1) using molecular beam epitaxy and atomic layer deposited HfO2 - A comparative study

Molecular-beam-epitaxy (MBE) and atomic-layer-deposition (ALD) high-κ HfO2 dielectrics have been in-situ deposited on MBE-grown pristine p- and n-In0.53Ga0.47As(0 0 1). The HfO2/In0.53Ga0.47As metal-oxide-semiconductor capacitors (MOSCAPs) from both methods all exhibit excellent capacitance-voltage (C-V) characteristics with true inversion and low leakage current densities. Moreover, interfacial trap densities (Dit's) with no discernible peaks at the mid-gap were measured using the temperature-dependent conductance method. Both HfO2/InGaAs hetero-structures have exhibited outstanding thermal stabilities to 800 °C.