| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5489185 | Journal of Crystal Growth | 2017 | 5 Pages |
Abstract
High quality Y2O3 on GaSb was achieved using both molecular beam epitaxy (MBE) and atomic layer deposition (ALD) with interfacial characteristics studied by in-situ X-ray photoelectron spectroscopy (XPS) and metal-oxide-semiconductor (MOS) electrical measurements. Ga-oxide and stoichiometric Sb-oxides were obtained in the MBE-Y2O3/GaSb and non-stoichiometric Sb2Ox (x<4) was found in the ALD-Y2O3/GaSb according to the XPS spectra. From the capacitance-voltage (CV) measurements, MBE-Y2O3 provides lower interfacial trap density (Dit) grown at elevated temperature of 200°C, while ALD-grown Y2O3 shows smaller hysteresis and higher dielectric constant.
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Authors
Y.H. Lin, K.Y. Lin, W.J. Hsueh, L.B. Young, T.W. Chang, J.I. Chyi, T.W. Pi, J. Kwo, M. Hong,