Control of melt-crystal interface shape during sapphire crystal growth by heat exchanger method

We numerically investigate the melt-crystal interface shape during the early stage of the solidification process when the crystal diameter increases. The contact angle between the melt-crystal interface and the crucible bottom wall is found obtuse during this stage, which is unfavorable for the crystal quality. We found that the obtuse contact angle is caused by the thermal resistance difference between the sapphire crystal and melt as well as the insufficient cooling effect of the crucible bottom. Two approaches are proposed to suppress the obtuse contact angle. The first approach is to increase the emissivity of the outer surface of crucible bottom. The second approach is to install a heat shield near the crucible bottom. The reduction of the emissivity of the heat shield is also favorable for the suppression of the obtuse contact angle. Compared with the increase of the emissivity of the crucible bottom, the installation of a heat shield is a more effective approach to prevent the appearance of an obtuse contact angle for the sake of reliability since a molybdenum heat shield can be reused and will not induce other impurities.