Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5489304 | Journal of Crystal Growth | 2017 | 5 Pages |
Abstract
Indium nitride (InN) films were deposited on Al2O3 substrates with a zinc oxide (ZnO) interlayer using by radio-frequency metalorganic molecular beam epitaxy (RF-MOMBE). We evaluated the impact of the flow rate of trimethylindium (In(CH3)3, TMIn) on the structure, surface morphology, and optical and electrical properties of the films using X-ray diffraction, scanning electron microscopy (SEM), transmission electron microscopy (TEM), UV-Vis spectroscopy, and Hall measurements. The XRD results indicated that all InN films were formed from single-phase wurtzite crystals with the preferred orientations along the c-axis. The SEM images indicated that the rough surfaces of the InN films grown with TMIn flow rates less than 0.55Â sccm. The TEM images showed that InN and ZnO had hexagonal structures (wurtzite) that were epitaxially grown by RF-MOMBE on the substrates. The electron concentrations ranged from 7.3Â ÃÂ 1019 to 2.56Â ÃÂ 1020Â cmâ3 of the InN films were measured.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Wei-Chun Chen, Hung-Pin Chen, Shou-Yi Kuo, Fang-I. Lai, Chien-Nan Hsiao, Cheng-Chung Lee,