Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5489324 | Journal of Crystal Growth | 2017 | 11 Pages |
Abstract
Thermal etching effect of GaN during growth interruption in the metalorganic chemical vapor deposition reactor was investigated in this paper. The thermal etching rate was determined by growing a series of AlGaN/GaN superlattice structures with fixed GaN growth temperature at 735 °C and various AlGaN growth temperature changing from 900 °C to 1007 °C. It was observed that the GaN layer was etched off during the growth interruption when the growth temperature ramped up to AlGaN growth temperature. The etching thickness was determined by high resolution X-ray diffractometer and the etching rate was deduced accordingly. An activation energy of 2.53 eV was obtained for the thermal etching process.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Feng Zhang, Masao Ikeda, Shuming Zhang, Jianping Liu, Aiqin Tian, Pengyan Wen, Yang Cheng, Hui Yang,