Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5489335 | Journal of Crystal Growth | 2017 | 5 Pages |
Abstract
We grew epitaxial layers on on-axis carbon-face 4H-silicon carbide substrates and investigated the growth conditions for the generation of spiral growth. We discovered that spiral growth occurs in regions where the local off-angle is less than 0.05° and when the spiral hillocks have a tilt angle of 0.06°. Moreover, we found that each spiral hillock coalesced without causing dislocation in the areas where the spiral growth occurred. Our results indicate that spiral growth is dominant when the spiral hillocks have a tilt angle greater than the off-angle of the substrate. Step-flow growth is overcome by spiral growth because the rate of spiral growth is greater than that of step-flow growth.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Keiko Masumoto, Kazutoshi Kojima, Hajime Okumura,