| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5489355 | Journal of Crystal Growth | 2017 | 17 Pages |
Abstract
A series of GaAs1âxSbx epilayers have been successfully grown on GaAs (1 0 0) substrates by liquid phase epitaxy (LPE) technique at about 550 °C. Samples with different antimony (Sb) contents have been analyzed by high-resolution X-ray diffraction (HRXRD) measurement, which confirms the incorporation of Sb in the epilayers. Room temperature optical properties of GaAs1âxSbx epilayers were performed by photoluminescence (PL) and transmission spectra.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Yang Wang, Shuhong Hu, Wei Zhou, Yan Sun, Bin Zhang, Chao Wang, Ning Dai,