Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5489359 | Journal of Crystal Growth | 2017 | 8 Pages |
Abstract
We studied defects and stress distributions in mosaic epitaxial diamond film using a confocal Raman spectroscopy, with a special attention to the junction area between the crystals. The mosaics was grown by microwave plasma CVD on closely arranged (1 0 0)-oriented HPHT type Ib substrates. The width of stress affected and defect enriched region around the junction show a tendency of extending with the film thickness, from â40 μm on the film-substrate interface to â250 μm in the layer 500 μm above the substrate, as found from the mosaics analysis in cross-section. The stress field around the junction demonstrates a complex pattern, with mixed domains of tensile and compressive stress, with maximum value of Ï â 0.6 GPa. A similar non-uniform pattern was observed for defect distribution as well. No sign of amorphous sp2 carbon in the junction zone was revealed.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Guoyang Shu, Bing Dai, V.G. Ralchenko, A.A. Khomich, E.E. Ashkinazi, A.P. Bolshakov, S.N. Bokova-Sirosh, Kang Liu, Jiwen Zhao, Jiecai Han, Jiaqi Zhu,