CeO2 nanocrystals and solid-phase heteroepitaxy of CeAlO3 interlayer on Al2O3(0Â 0Â 0Â 1) substrate

Grain growth and interfacial solid state of CeO2 nanocrystals (NCs) layer on Al2O3(0 0 0 1) substrate were examined. CeO2 NCs layer on Al2O3(0 0 0 1) was prepared by dipping method using CeO2 nanocrystals colloid solution. After heat treatment at 1000 °C in air, CeO2 NCs layer was formed on Al2O3(0 0 0 1). The CeO2 NCs sintered to form a surface layer with an interlayer of CeAlO3 after heat treatment at 950 °C in H2/Ar, leading to dense and smooth CeO2 NCs layer on Al2O3(0 0 0 1) substrate. CeAlO3 was grown via diffusion of CeO2-x (non-stoichiometric CeO2) and Al2O3, suggesting solid-phase reaction heteroepitaxy mechanism on Al2O3(0 0 0 1) single crystal substrate.