| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5489376 | Journal of Crystal Growth | 2017 | 5 Pages |
Abstract
Epitaxial heterostructures of ferroelectric Ba0.6Sr0.4TiO3 and highly conducting SrMoO3 were grown by pulsed laser deposition on SrTiO3 (0 0 1) substrates. Surface oxidation of the SrMoO3 film is suppressed using a thin cap interlayer of Ba0.6Sr0.4TiO3-δ grown in reduced atmosphere. As shown by X-ray photoelectron spectroscopy, the Mo4+ valence state of the SrMoO3 films is stable upon annealing of the sample in oxygen up to 600 °C. The described oxygen interface engineering enables utilization of the highly conducting material SrMoO3 in multilayer oxide ferroelectric varactors.
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Authors
Aldin Radetinac, Jürgen Ziegler, Mehran Vafaee, Lambert Alff, Philipp Komissinskiy,