Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5489396 | Journal of Crystal Growth | 2017 | 24 Pages |
Abstract
P-type 4H-silicon carbide (SiC) crystal growth has been achieved by physical vapor transport using aluminum and nitrogen co-doping. Aluminum carbide with a two-zone heating furnace was used for p-type doping, and yielded homogenous aluminum doping during SiC crystal growth by physical vapor transport. The 4H-SiC polytype with high-aluminum doping was unstable, but aluminum-nitrogen co-doping improved its stability. We grew p-type 4H-SiC bulk crystals of less than 90 mΩ cm by using co-doping. Secondary-ion mass spectrometry and Raman spectroscopy showed that the crystal growth of highly doped p-type SiC can be achieved by using the physical vapor transport method.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Kazuma Eto, Hiromasa Suo, Tomohisa Kato, Hajime Okumura,