Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5489418 | Journal of Crystal Growth | 2017 | 24 Pages |
Abstract
Nitrogen doped BaSi2 layers are grown on high-resistivity n-Si (1Â 1Â 1) substrates by molecular beam epitaxy using a radio-frequency nitrogen plasma. The nitrogen concentration measured by secondary ion mass spectrometry is homogeneous throughout the grown layers. The carrier concentration is measured by Hall measurement using the van der Pauw method. Nitrogen-doped BaSi2 shows n- or p-type conductivity, depending on the intensity of nitrogen plasma. The hole concentration is of the order of 1016-1017Â cmâ3 at room temperature. The acceptor level is estimated to be approximately 64Â meV from the temperature dependence of hole concentration. The temperature dependence of resistivity is explained by variable-range hopping conduction in p-BaSi2. First-principle calculation suggests that the nitrogen atoms are most likely to occupy the interstitial site in BaSi2.
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Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Zhihao Xu, Tianguo Deng, Ryota Takabe, Kaoru Toko, Takashi Suemasu,