Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5489448 | Journal of Crystal Growth | 2017 | 17 Pages |
Abstract
Three dimensional (3D) and two dimensional (2D) alternation growth was used to grow AlN epitaxial layers on sapphire substrates. AlN samples grown using this technique have higher crystalline quality and lower dislocation density than samples grown using only 3D or 2D growth modes as witnessed by the high-resolution X-ray diffraction. Smooth atomic terraces with root mean square roughness of 0.107Â nm were observed using atomic force microscopy (AFM) when the 3D and 2D AlN were 75Â nm and 425Â nm, respectively. This sample possesses single crystallographic orientation along the c-axis identified by Raman spectroscopy. Furthermore, the 3D/2D alternating growth mode modulates internal stress in AlN epitaxial layer by adjusting 2D AlN thickness, and the mechanism was studied in detail.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Yanmin Guo, Yulong Fang, Jiayun Yin, Zhirong Zhang, Bo Wang, Jia Li, Weili Lu, Zhihong Feng,