Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5489455 | Journal of Crystal Growth | 2017 | 15 Pages |
Abstract
High quality crack-free Ga-rich Al26.1Ga73.9N film was grown on trapezoidal patterned GaN template (TPGT) by low-pressure metalorganic chemical vapor deposition. The super-short period AlN/GaN superlattices structure was used to grow AlGaN material instead of the direct growth method. We obtained large lateral to vertical growth rate ratio larger than 4.79. The growth rate of GaN layer was proved to be the decisive factor of the lateral to vertical growth rate ratio. Moreover, for AlGaN growth, we found that that the TPGT is more beneficial to suppression of crack and relaxation of biaxial tensile strain than planar GaN template. The obtained results demonstrate that, comparing with AlGaN grown on planar GaN template, the threading dislocation density in AlGaN grown on TPGT was reduced from 2Ã109Â cmâ2 to 2Ã108Â cmâ2.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Ming Xiao, Jincheng Zhang, Yue Hao,