| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5489469 | Journal of Crystal Growth | 2017 | 5 Pages |
Abstract
A ZnMgO:N/ZnO/ZnO:Ga single hetero-junction light emitting diode structure on Al2O3 (112Ì
0) substrate was fabricated by metalorganic vapor phase epitaxy. By using ZnMgO:N as a substitute for a ZnO:N top layer of a homojunction LED, improved rectifying currentâvoltage characteristics were obtained. Although the device had a heating problem and the luminescent area was partly in the ZnMgO:N layer, a sharp ultraviolet electroluminescence emission at 3.17Â eV was successfully observed at room temperature.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Yasuhisa Fujita, Shogo Yanase, Hirokazu Nishikori, Yuto Hiragino, Yutaka Furubayashi, Jie Lin, Toshiyuki Yoshida,