Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5489476 | Journal of Crystal Growth | 2017 | 17 Pages |
Abstract
We have grown IrO2 thin films on TiO2(110) substrates to determine the pulsed laser deposition growth window for iridates. Relaxed IrO2 films were obtained at a growth temperature of 500 °C and background oxygen pressure of 100 m Torr; otherwise, either pure Ir metal films or evaporative Ir loss were observed. Although x-ray Φ-scan measurement indicated that the films were epitaxial, a distinct grain structure was seen by atomic force microscopy and transmission electron microscopy. The grain boundaries were found to limit the conductivity of films at low temperature. It appeared that strain relaxation leads to stacking faults at grain boundaries.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Xiuyi Hou, Ryota Takahashi, Takahisa Yamamoto, Mikk Lippmaa,