Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p++-GaN layer

Growth conditions are used to control the residual carbon impurity incorporation in p++-GaN layers. Specific contact resistance (ρc) with various residual carbon concentrations has been investigated through the circular transmission line model (CTLM) method and secondary ion mass spectroscopy (SIMS) analysis. A correlation between residual carbon and ρc indicates that incorporation of proper carbon impurity can be an advantage for Ohmic contact, although carbon can also act as a compensating donor to worsen the Ohmic contact at a very high concentration. Finally, ρc is improved to 6.80 × 10−5 Ω × cm2 with a carbon concentration of 8.3 × 1017 cm−3 in p++-GaN layer, when the growth temperature, pressure and flow rate of CP2Mg and TMGa are 940 °C, 100 Torr, 3 μmol/min and 28 μmol/min, respectively.