Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5489499 | Journal of Crystal Growth | 2017 | 6 Pages |
Abstract
Hexagonal crystals are suitable underlayer candidates for hexagonal boron nitride (h-BN) heteroepitaxy due to their similar in-plane atomic arrangement. When the thickness of h-BN is beyond a critical value, its accumulated stress resulting from the lattice mismatch can be relaxed by generating dislocation or changing into three-dimensional growth. Here we calculate the evolution of h-BN critical thickness with the growth temperature when it is grown on various frequently-used hexagonal crystals for both cases. The results show that in order to minimize the lattice mismatch, a low growth temperature is preferred when grown on GaN or Si(1 1 1) while on the contrary when grown on 6H-SiC or α-Al2O3. Besides, AlN is the most unique underlayer as its lattice mismatch with h-BN is relatively small (<0.7%) and they can even fully match around 1150 K, which means it can be used as a buffer layer for thick h-BN (>100 nm) growth. Moreover, large area of two-dimensional thin h-BN (5-15 nm) layer can be obtained on GaN, 6H-SiC, Si(1 1 1) or α-Al2O3 except for graphene. On the other hand, calculation indicates that large area of graphene can be grown on h-BN.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Jiadong Yu, Lai Wang, Zhibiao Hao, Yi Luo, Changzheng Sun, Yanjun Han, Bing Xiong, Jian Wang, Hongtao Li,