Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5489501 | Journal of Crystal Growth | 2017 | 17 Pages |
Abstract
In order to improve conversion efficiency of THz wave generation, Germanium (Ge)-doped gallium selenide (GaSe) single crystals have been grown by Temperature Difference Method under Controlled Vapor Pressure (TDM-CVP). In this article, electrical property and lattice constant of Ge doped GaSe (GaSe:Ge) crystal are compared with that of not-intentionally doped GaSe crystal. Compared with non-doped GaSe crystal, carrier concentration p was decreased by Ge-doping (not-intentionally doped GaSe p=3.2Ã1015Â cmâ3 at 255Â K, GaSe:Ge p=4.9Ã1014Â cmâ3 at 255Â K). In addition, it has been confirmed that lattice constant of GaSe crystal increased with doping Ge concentration increased.
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Physical Sciences and Engineering
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Condensed Matter Physics
Authors
Y. Sato, S. Zhao, K. Maeda, T. Tanabe, Y. Oyama,