Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5489548 | Journal of Crystal Growth | 2017 | 22 Pages |
Abstract
Low temperature metalorganic chemical vapor deposition using trimethylgallium and water was investigated. The surface morphology of the film was almost flat at a deposition temperature below 182 °C. This flat film was a mixture of nanocrystalline and amorphous phase. The film deposited at a temperature of 272 °C resulted in a nanowire structure. X-ray diffraction measurements revealed that the nanowire film was a mixture of gallium hydroxide, gallium oxyhydroxide, and gallium tohdite or gallium oxide. We also found that post-deposition annealing above 600 °C significantly changed the crystal structure of the both flat and nanowire films. Monoclinic gallium oxide phase was dominant after the post-deposition annealing above 600 °C.
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Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Yuki Takiguchi, Shinsuke Miyajima,