Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5489571 | Journal of Crystal Growth | 2017 | 4 Pages |
Abstract
Strain relaxation of InxGa1âxAs/GaAs(001) with systematically changed In content between x=0.23 and x=0.80 has been studied using in situ synchrotron X-ray diffraction during molecular beam epitaxy growth. Correlation between the In composition and the degree of relaxation in the InGaAs films was derived from the reciprocal space maps. While InGaAs with a uniform composition was grown in the regime of the two-dimensional growth, a separation of the In composition was observed for the InGaAs films grown in the Stranski-Krastanov mode.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Ryota Deki, Takuo Sasaki, Masamitu Takahasi,