Article ID Journal Published Year Pages File Type
5489575 Journal of Crystal Growth 2017 4 Pages PDF
Abstract
Er0.02Yb0.11Y0.87Al3(BO3)4 epitaxial layers were grown from K2Mo3O10 based fluxed melts using LPE technique. HT-SGDS grown YAl3(BO3)4 single crystals were used as substrates. Growth kinetics and micromorphology of (Er.Yb):YAl3(BO3)4 thin films were investigated.
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Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
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High-temperature growth and characterization of (Er,Yb):YAl3(BO3)4 single crystal layers
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