Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5489587 | Journal of Crystal Growth | 2017 | 5 Pages |
Abstract
In this study, a global transient numerical simulation of silicon growth from the beginning of the solidification process until the end of the cooling process is carried out modeling the growth of an 800Â kg ingot in an industrial seeded directional solidification furnace. The standard furnace is modified by the addition of insulating blocks in the hot zone. The simulation results show that there is a significant decrease in the thermal stress and dislocation density in the modified model as compared to the standard one (a maximal decrease of 23% and 75% along the center line of ingot for thermal stress and dislocation density, respectively). This modification reduces the heating power consumption for solidification of the silicon melt by about 17% and shortens the growth time by about 2.5Â h. Moreover, it is found that adjusting the operating conditions of modified model to obtain the lower growth rate during the early stages of the solidification process can lower dislocation density and total heater power.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Thi Hoai Thu Nguyen, Jyh-Chen Chen, Chieh Hu, Chun-Hung Chen, Yen-Hao Huang, Huang-Wei Lin, Andy Yu, Bruce Hsu,