Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5489614 | Journal of Crystal Growth | 2017 | 5 Pages |
Abstract
In this paper, we have performed experimental study of dislocation density during 4-in. germanium crystal growth using the Czochralski method and comprehensive unsteady modeling of the same crystal growth processes, taking into account global heat transfer, melt flow and melt/crystal interface shape evolution. Thermal stresses in the crystal and their relaxation with generation of dislocations within the Alexander-Haasen model have been calculated simultaneously with crystallization dynamics. Comparison to experimental data showed reasonable agreement for the temperature, interface shape and dislocation density in the crystal between calculation and experiment.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
V.V. Artemyev, A.D. Smirnov, V.V. Kalaev, V.M. Mamedov, A.P. Sidko, O.I. Podkopaev, E.D. Kravtsova, A.F. Shimansky,