Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5489627 | Journal of Crystal Growth | 2017 | 20 Pages |
Abstract
Pure and Cr doped Ca2GeO4, Ca5Ge3O11 and Li2CaGeO4 single crystals were grown by the flux method. The Ca2GeO4 crystals were grown at significantly more proper conditions than used up to now, while Ca5Ge3O11 and Li2CaGeO4 single crystals were grown for the first time. The macroscopic defects are characterized and discussed in relation to the growth conditions. The distribution coefficients of Cr were established being very different for the three crystals. EPR investigation shows that as in the case of Ca2GeO4, in Ca5Ge3O11 and Li2CaGeO4 the Cr occupied the tetrahedral position. The Cr doped crystals show broad band emissions from 1000 to 1600Â nm. The dependence of the integrated intensity of emission on the Cr concentration in the crystals is discussed.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
M.O. Marychev, I. Koseva, G. Gencheva, R. Stoyanova, R. Kukeva, V. Nikolov,