| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5489639 | Journal of Crystal Growth | 2017 | 11 Pages |
Abstract
We report here the temperature-dependent incorporation kinetics of dimeric arsenic in InAs(001) homoepitaxy, using reflection high-energy electron diffraction (RHEED). Surface reconstructions, in combination with the RHEED investigation have provided insight into the growth of InAs(001), developing an accurate method of controlling the V:III ratio, which has been utilised to probe the low temperature epitaxial growth of indium arsenide epitaxial layers.
Keywords
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Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
J.J. Bomphrey, M.J. Ashwin, T.S. Jones,