Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5489642 | Journal of Crystal Growth | 2017 | 4 Pages |
Abstract
A novel V-groove vertical heterostructure field effect transistor structure is proposed using semi-polar (11-22) GaN. A crystallographic potassium hydroxide self-limiting wet etching technique was developed to enable a damage-free V-groove etching process. An AlGaN/GaN HFET structure was successfully regrown by molecular beam epitaxy on the V-groove surface. A smooth AlGaN/GaN interface was achieved which is an essential requirement for the formation of a high mobility channel.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
H. Qian, K.B. Lee, S. Hosseini Vajargah, S.V. Novikov, I. Guiney, Z.H. Zaidi, S. Jiang, D.J. Wallis, C.T. Foxon, C.J. Humphreys, P.A. Houston,