Indium incorporation in semipolar (202Ì 1) and nonpolar (101Ì 0) InGaN grown by plasma assisted molecular beam epitaxy

Semipolar (202̅1), nonpolar m-plane (101̅0) and polar c-plane (0001) GaN and InGaN layers were grown by plasma-assisted molecular beam epitaxy. The surface of semipolar and nonpolar GaN grown under Ga-rich conditions is very smooth. The indium incorporation efficiency in InGaN layers grown under In-rich growth conditions is studied on three surface orientations (i) as a function of temperature from 570 to 650 °C and (ii) for varied active nitrogen flux from 0.41 to 2.03 µm/h. The In content follows the relation (101̅0)<(202̅1) <<(0001) in all of the experiments. Indium composition in InGaN layers can be increased (i) by the decrease of the growth temperature and (ii) increase of the applied nitrogen flux for all studied surface orientations. Additionally, surface morphology of semipolar, nonpolar and c-polar InGaN layers grown at 650, 640 and 620 °C is compared. No increase in surface roughness for semipolar and nonpolar InGaN was observed in contrast to c-plane counterparts.